Fdtd lumerical example8/22/2023 ![]() ![]() In this application example, we present a simulation methodology for the sensitivity analysis and design optimization of a Ge-on-Si photodetector. Typically, germanium is used as the absorbing medium in detectors for silicon photonics applications given its good absorbance in the C-band and its ease of integration into standard silicon CMOS processing. This generation rate then appears as a source term in the continuity equations solved in the electrical simulation ( more information). The optical properties of the photodetector are simulated using the finite-difference time-domain (FDTD) method the local generation rate of electron-hole pairs can be calculated from optical absorbed power. These components can be accurately simulated and optimized using a combination of optical and electrical solvers. Photo-detectors convert optical signals into electrical signals to recover the information encoded on the optical channel. Sensitivity of the responsivity to variations in the design parameters is analyzed. In this example, we will study the performance of a lateral germanium-on-silicon photodetector with FDTD (optical simulation) and CHARGE (electrical simulation). ![]()
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